Efficient PL Emission from p-type Porous Silicon: A Comparative Study for Selection of Effective Anodization Parameters

The physical mechanism of highly efficient photoluminescence (PL) emission from p-type silicon is described by a comparative study of the effectiveness of the etching parameters in an electrochemical anodization technique. Two series of porous silicon samples were prepared in a combination of anodization current and time, to maintain the total amount of anodic charge transfer constant. Photoluminescence studies show that irrespective of the amount of charge transfer, the samples prepared with comparatively higher current density show an efficient PL as well as stronger blueshift in the emission energy vis-à-vis the samples prepared for longer durations. An overall decrease in crystallite size, as estimated by Raman spectral analysis, was observed for both series of samples with the progress of charge transfer. Comparative analysis shows a marginal difference in crystallite size for both series of samples in the initial state of charge transfer, whereas major differences arise at higher values. This is explained with the formation of silicon suboxide on the porous surface at higher current density, leading to initiation of side wall reaction, and higher reduction rate in crystallite size as well as strong luminescence due to the carrier quantum confinement effect.     

Epigenetic Regulation of the Hippocampus,with Special Reference to Radiation Exposure

The hippocampus is crucial in learning, memory and emotion processing, and is involved in the development of different neurological and neuropsychological disorders. Several epigenetic factors, including DNA methylation, histone modifications and non-coding RNAs, have been shown to regulate the development and function of the hippocampus, and the alteration of epigenetic regulation may play important roles in the development of neurocognitive and neurodegenerative diseases. This review summarizes the epigenetic modifications of various cell types and processes within the hippocampus and their resulting effects on cognition, memory and overall hippocampal function. In addition, the effects of exposure to radiation that may induce a myriad of epigenetic changes in the hippocampus are reviewed. By assessing and evaluating the current literature, we hope to prompt a more thorough understanding of the molecular mechanisms that underlie radiation-induced epigenetic changes, an area which can be further explored.     

Within-class multimodal classification

Multimedia Tools and Applications - In many real-world classification problems there exist multiple subclasses (or clusters) within a class; in other words, the underlying data distribution is...     

Matrix Transformation in Boron Containing High-Temperature Co–Re–Cr Alloys

An addition of boron largely increases the ductility in polycrystalline high-temperature Co–Re alloys. Therefore, the effect of boron on the alloy structural characteristics is of high importance for the stability of the matrix at operational temperatures. Volume fractions of ε (hexagonal close-packed—hcp), γ (face-centered cubic—fcc) and σ (Cr₂Re₃ type) phases were measured at ambient and high temperatures (up to 1500 °C) for a boron-containing Co–17Re–23Cr alloy using neutron diffraction. The matrix phase undergoes an allotropic transformation from ε to γ structure at high temperatures, similar to pure cobalt and to the previously investigated, more complex Co–17Re–23Cr–1.2Ta–2.6C alloy. It was determined in this study that the transformation temperature depends on the boron content (0–1000 wt. ppm). Nevertheless, the transformation temperature did not change monotonically with the increase in the boron content but reached a minimum at approximately 200 ppm of boron. A probable reason is the interplay between the amount of boron in the matrix and the amount of σ phase, which binds hcp-stabilizing elements (Cr and Re). Moreover, borides were identified in alloys with high boron content.     

Imaging of two-dimensional unsaturated moisture flows in uncracked and cracked cement-based materials using electrical capacitance tomography

The development of visualizing tools to monitor unsaturated moisture flow in cement-based materials is of great importance, as most degradation processes in cement-based materials are connected to and take place in the presence moisture. This paper investigates the ability of electrical capacitance tomography (ECT) to image two-dimensional (2D) unsaturated moisture flow in cement-based materials. In ECT, the electrical permittivity distribution within an object is reconstructed based on measured capacitances between electrodes attached on the object’s surface. In a series of experiments, mortar specimens with and without discrete cracks were imaged with ECT during a 2D moisture ingress. The results show that ECT is able to monitor the evolution of the moisture flow, and to approximate the shape and position of the moisture front. These findings indicate that ECT is a viable method for monitoring and visualizing 2D unsaturated moisture flow in cement-based materials in the presence and absence of discrete cracks.     

Ni,Cr, and Fe surfaces corroded by molten ZnCl2

Understanding the corrosion of molten ZnCl₂ on metal surfaces is significant for the corrosion protection of metals, sustainable use of molten salts, preparation of ZnO coatings, and so on. In this paper, surfaces of pure Ni, Cr, and Fe corroded by molten ZnCl₂ were investigated. The results show that Ni suffered very slight corrosion, while Cr experienced more serious corrosion than Ni, but lighter corrosion than Fe. The morphology of the corrosion of Cr and Fe, respectively, presented pitting and intergranular corrosion characteristics. Furthermore, nanostructured ZnO coatings were obtained on the surfaces of Ni and Fe, but not on the surface of Cr. The ZnO coating on the Ni surface was doped with a small amount of Zn₅(OH)₈Cl₂, and the ZnO coating on the Fe surface was doped with ZnFe₂O₄ and Zn₂OCl₂. The coatings on the Ni and Fe surfaces had an average thickness of 1.5 and 50 μm, respectively.     

Appraisal of Agriglass in Promoting Maize Production Under Abiotic Stress Conditions

An agriglass composition containing different oxides acts as a slow release for macro and micro nutrients and was chosen to improve maize yield under most important abiotic stresses which affecting agriculture development; salinity and drought. A field experiment was performed in salt affected soil (EC =?7.5 dSm^??1) by using different water deficit rates (I1 = 100, I2 = 85 and I3 = 70% of maize water requirements). Irrigation levels were located in main plots. Every main-plot divided into six sub-plots contained glassy fertilizer treatments [F1 = 55 kg fed^?1 with 1/2 mm diameter of agriglass (fed. =?4200 m²), F2 = 55 kg fed^?1 with 1 mm diameter, F3 = 80 kg fed^?1 with 1/2 mm diameter, F4 = 80 kg fed^?1 with 1 mm diameter, F5 = Recommendations of Ministry of Agriculture and F6 = control]. The experimental results demonstrated that, ears, straw, grains and biological yields increased with increasing both water and agriglass rates. Application of agriglass as a slow release fertilizer improved yield more than mineral fertilizer. Some growth parameters, water use efficiency (IWUE), macronutrients concentration and their relations were included. Other studies on residual effect of agriglass and the annual application rates to withstand salinity and drought stress by strategic crops are required.     

Effect of ZnO layer thickness upon optoelectrical properties of NiO/ ZnO heterojunction prepared at room temperature

In this work, p-NiO/n-ZnO heterostructures were successfully prepared at room temperature using RF sputtering technique. The influence of ZnO layer thickness on the performance of the heterojunction was investigated. The deposited ZnO layers have a hexagonal Wurtzite structure with preferable growth orientations along (002) and (103) for thinner films. Increasing the thickness results in more crystallographic orientation randomness. The current–voltage measurements of the realized heterojunctions showed a clear rectifying behavior. The measured ideality factor varies from 2.5 to 1.6 according to the thickness of ZnO layer. The series resistance of the device is enlarged with increasing ZnO thickness. The deduced parameters from the I–V characteristics suggest that 200 nm is the optimal thickness of the ZnO layer according to our experimental conditions. We attribute the relatively better performance of this thickness to achieving reasonable compensation between serial resistance and ideality factor. The best heterojunction was tested and successfully used as a UV detector.